TY - JOUR A1 - Muthukumar, Kaliappan A1 - Jeschke, Harald O. A1 - Valentí, Roser A1 - Begun, Evgeniya A1 - Schwenk, Johannes A1 - Porrati, Fabrizio A1 - Huth, Michael T1 - Spontaneous dissociation of Co2(CO)8 and autocatalytic growth of Co on SiO2: A combined experimental and theoretical investigation T2 - Beilstein journal of nanotechnology N2 - We present experimental results and theoretical simulations of the adsorption behavior of the metal–organic precursor Co2(CO)8 on SiO2 surfaces after application of two different pretreatment steps, namely by air plasma cleaning or a focused electron beam pre-irradiation. We observe a spontaneous dissociation of the precursor molecules as well as autodeposition of cobalt on the pretreated SiO2 surfaces. We also find that the differences in metal content and relative stability of these deposits depend on the pretreatment conditions of the substrate. Transport measurements of these deposits are also presented. We are led to assume that the degree of passivation of the SiO2 surface by hydroxyl groups is an important controlling factor in the dissociation process. Our calculations of various slab settings, using dispersion-corrected density functional theory, support this assumption. We observe physisorption of the precursor molecule on a fully hydroxylated SiO2 surface (untreated surface) and chemisorption on a partially hydroxylated SiO2 surface (pretreated surface) with a spontaneous dissociation of the precursor molecule. In view of these calculations, we discuss the origin of this dissociation and the subsequent autocatalysis. KW - Co2(CO)8 KW - deposition KW - dissociation KW - EBID KW - FEBID KW - precursor KW - radiation-induced nanostructures Y1 - 2012 UR - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/27777 UR - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-277774 SN - 2190-4286 N1 - This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. VL - 3 SP - 546 EP - 555 PB - Beilstein-Institut zur Förderung der Chemischen Wissenschaften CY - Frankfurt, M. ER -