TY  - INPR
A1  - Balgley, Jesse
A1  - Butler, Jackson
A1  - Biswas, Sananda
A1  - Ge, Zhehao
A1  - LaGasse, Samuel
A1  - Taniguchi, Takashi
A1  - Watanabe, Kenji
A1  - Cothrine, Matthew
A1  - Mandrus, David G.
A1  - Velasco, Jairo
A1  - Valentí, Roser
A1  - Henriksen, Erik A.
T1  - Ultra-sharp lateral p-n junctions in modulation-doped graphene
T2  - arXiv
N2  - We demonstrate ultra-sharp (≲10 nm) lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The p-n junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of α-RuCl3 across a thin insulating barrier. We extract the p-n junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of α-RuCl3 located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and α-RuCl3 shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the α-RuCl3 flake.
KW  - Graphene
KW  - α-RuCl3
KW  - p-n junction
KW  - electronic transport
KW  - scanning tunneling microscopy
KW  - density functional theory
Y1  - 2022
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/82462
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-824623
UR  - https://arxiv.org/abs/2203.06295v1
IS  - 2203.06295 Version 1
PB  - arXiv
ER  -