The Silicon Tracking System of the CBM experiment at FAIR : development of microstrip sensors and signal transmission lines for a low-mass, low-noise system

In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in t
In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in the Silicon Tracking System (STS) of the fixed-target heavy-ion Compressed Baryonic Matter (CBM) experiment which is under development at the upcoming Facility for Antiproton and ion Research (FAIR) in Darmstadt, Germany. The highly segmented low-mass tracking system is a central CBM detector system to resolve the high tracking densities of charged particles originating from beam-target interactions. Considering the low material budget requirement the double-sided silicon microstrip detectors have been used in several planar tracking stations. The readout electronics is planned to be installed at the periphery of the tracking stations along with the cooling system. Low-mass multi-line readout cables shall bridge the distance between the microstrip sensors and the readout electronics. The CBM running operational scenario suggests that some parts of the tracking stations are expected to be exposed to a total integrated particle fluence of the order of 1e14 neq/cm2. After 1e14 neq/cm2 the damaged modules in the tracking stations will be replaced. Thus radiation hard sensor is an important requirement for the sensors. Moreover, to cope with the high reaction rates, free-streaming (triggerless) readout electronics with online event reconstruction must be used which require high signal-to-noise (SNR) ratio (i.e., high signal efficiency, low noise contributions). Therefore, reduction in noise is a major goal of the sensor and cable development.
For better insight into the different aspects of the silicon microstrip sensors and multi-line readout cables, the simulation study has been performed using SYNOPSYS TCAD tools. 3D models of the silicon microstrip sensors and the readout cables were implemented which is motivated by the stereoscopic construction of the silicon microstrip sensors. For the evaluation of the performance of the silicon microstrip sensors in the harsh radiation environment during experimental operation, a radiation damage model has been included. It reproduces the behavior of the irradiated CBM prototype sensors. In addition to the static characteristics, the interstrip parameters relevant to understand strip isolation and cross-talk issues have been extracted. The transient simulations have been performed to estimate the charge collection performance of the irradiated sensors. The signal transmission in the readout cables has been evaluated with the finite element simulation tool RAPHAEL. Based on the performance of the front-end electronics used for early prototyping in the CBM experiment, capacitive and resistive noise contributions from the silicon microstrip sensors and multi-line readout cables have been extracted.
To validate the aforementioned simulations, numerous tests have been performed both on the multi-line readout cables and silicon microstrip sensors. Characterizations of multi-line readout cables and silicon microstrip sensors in laboratory conditions have been found to agree reasonably well with the simulations. Considering the expected radiation environment the behavior of silicon microstrip sensors have been studied especially in terms of noise and charge collection efficiency. Source-scan of the silicon microstrip sensors using 241Am is presented. In order to test a first system of detector stations including the data acquisition system, slow control and online monitoring software and for track reconstruction, in-beam tests have been performed at the COSY synchrotron of the Research Center Juelich, Germany. Further, different design parameters have been suggested to improve the sensor and readout cable design on the basis of the simulations and the measurements. Many of these parameters have been implemented in the new prototypes under production. These new prototypes will be tested in-beam by the end of 2013.
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Metadaten
Author:Minni Singla
URN:urn:nbn:de:hebis:30:3-330604
Publisher:Univ.-Bibliothek
Place of publication:Frankfurt am Main
Referee:Peter Senger, Joachim Stroth
Document Type:Doctoral Thesis
Language:English
Date of Publication (online):2014/03/04
Year of first Publication:2014
Publishing Institution:Universitätsbibliothek Johann Christian Senckenberg
Granting Institution:Johann Wolfgang Goethe-Universität
Date of final exam:2014/01/29
Release Date:2014/03/04
Pagenumber:185
HeBIS PPN:337345945
Institutes:Physik
Dewey Decimal Classification:530 Physik
Sammlungen:Universitätspublikationen
Licence (German):License Logo Veröffentlichungsvertrag für Publikationen

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