TY  - JOUR
A1  - Čibiraitė-Lukenskienė, Dovilé
A1  - Ikamas, Kęstutis
A1  - Lisauskas, Tautvydas
A1  - Krozer, Viktor
A1  - Roskos, Hartmut
A1  - Lisauskas, Alvydas
T1  - Passive detection and imaging of human body radiation using an uncooled field-effect transistor-based THz detector
T2  - Sensors
N2  - This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/√Hz, respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstratestheimpressivethermalsensitivitywhichcanbeachievedwithsuchasensor. Recording of a 2.3×7.5-cm2-sized image of the fingers of a hand with a pixel size of 1 mm2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection.
KW  - passive imaging
KW  - human-body radiation
KW  - THz detection
KW  - TeraFET
KW  - field-effect transistor
KW  - terahertz
Y1  - 2020
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/55469
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-554695
SN  - 1424-8220
N1  - © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
VL  - 20
IS  - 15
SP  - 1
EP  - 14
PB  - MDPI
CY  - Basel
ER  -