TY  - JOUR
A1  - Asaba, Tomoya
A1  - Peng, Lang
A1  - Ono, Takahiro
A1  - Akutagawa, Satoru
A1  - Tanaka, Ibuki
A1  - Murayama, Hinako
A1  - Suetsugu, Shota
A1  - Razpopov, Aleksandar
A1  - Kasahara, Yuichi
A1  - Terashima, Takahito
A1  - Kohsaka, Yuhki
A1  - Shibauchi, Takasada
A1  - Ichikawa, Masatoshi
A1  - Valentí, Roser
A1  - Sasa, Shin-ichi
A1  - Matsuda, Yuji
T1  - Growth of self-integrated atomic quantum wires and junctions of a Mott semiconductor
T2  - Science Advances
N2  - Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer these wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. Here, we discover a simple method to fabricate atomic-scale wires with various arrangements, including stripes, X-junctions, Y-junctions, and nanorings. Single-crystalline atomic-scale wires of a Mott insulator, whose bandgap is comparable to those of wide-gap semiconductors, are spontaneously grown on graphite substrates by pulsed-laser deposition. These wires are one unit cell thick and have an exact width of two and four unit cells (1.4 and 2.8 nm) and lengths up to a few micrometers. We show that the nonequilibrium reaction-diffusion processes may play an essential role in atomic pattern formation. Our findings offer a previously unknown perspective on the nonequilibrium self-organization phenomena on an atomic scale, paving a unique way for the quantum architecture of nano-network.
Y1  - 2023
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/81967
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-819674
SN  - 2375-2548
VL  - 9
IS  - 18, eabq5561
PB  - American Association for the Advancement of Science
CY  - Washington, DC [u.a.]
ER  -