TY  - JOUR
A1  - Molnar, Wolfgang
A1  - Lugstein, Alois
A1  - Wojcik, Tomasz
A1  - Pongratz, Peter
A1  - Auner, Norbert
A1  - Bauch, Christian
A1  - Bertagnolli, Emmerich
T1  - Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor
T2  - Beilstein journal of nanotechnology
N2  - Perchlorinated polysilanes were synthesized by polymerization of tetrachlorosilane under cold plasma conditions with hydrogen as a reducing agent. Subsequent selective cleavage of the resulting polymer yielded oligochlorosilanes SinCl2n+2 (n = 2, 3) from which the octachlorotrisilane (n = 3, Cl8Si3, OCTS) was used as a novel precursor for the synthesis of single-crystalline Si nanowires (NW) by the well-established vapor–liquid–solid (VLS) mechanism. By adding doping agents, specifically BBr3 and PCl3, we achieved highly p- and n-type doped Si-NWs by means of atmospheric-pressure chemical vapor deposition (APCVD). These as grown NWs were investigated by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM), as well as electrical measurements of the NWs integrated in four-terminal and back-gated MOSFET modules. The intrinsic NWs appeared to be highly crystalline, with a preferred growth direction of [111] and a specific resistivity of ρ = 6 kΩ·cm. The doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation.
KW  - chemical vapour deposition
KW  - field-effect transistor
KW  - oligosilanes
KW  - radiation-induced nanostructures
KW  - silicon nanowires
KW  - vapor–liquid–solid mechanism
Y1  - 2012
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/27778
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-277787
SN  - 2190-4286
N1  - This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
VL  - 3
SP  - 564
EP  - 569
PB  - Beilstein-Institut zur Förderung der Chemischen Wissenschaften
CY  - Frankfurt, M.
ER  -