TY  - JOUR
A1  - Salvat-Pujol, Francesc
A1  - Jeschke, Harald O.
A1  - Valentí, Roser
T1  - Simulation of electron transport during electron-beam-induced deposition of nanostructures
T2  - Beilstein journal of nanotechnology
N2  - We present a numerical investigation of energy and charge distributions during electron-beam-induced growth of tungsten nanostructures on SiO2 substrates by using a Monte Carlo simulation of the electron transport. This study gives a quantitative insight into the deposition of energy and charge in the substrate and in the already existing metallic nanostructures in the presence of the electron beam. We analyze electron trajectories, inelastic mean free paths, and the distribution of backscattered electrons in different compositions and at different depths of the deposit. We find that, while in the early stages of the nanostructure growth a significant fraction of electron trajectories still interacts with the substrate, when the nanostructure becomes thicker the transport takes place almost exclusively in the nanostructure. In particular, a larger deposit density leads to enhanced electron backscattering. This work shows how mesoscopic radiation-transport techniques can contribute to a model that addresses the multi-scale nature of the electron-beam-induced deposition (EBID) process. Furthermore, similar simulations can help to understand the role that is played by backscattered electrons and emitted secondary electrons in the change of structural properties of nanostructured materials during post-growth electron-beam treatments.
KW  - electron backscattering
KW  - electron transport
KW  - (F)EBID
KW  - Monte Carlo simulation
KW  - PENELOPE
Y1  - 2013
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/82418
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-824186
SN  - 2190-4286
VL  - 4
SP  - 781
EP  - 792
PB  - Beilstein-Institut zur Förderung der Chemischen Wissenschaften
CY  - Frankfurt am Main
ER  -