TY  - INPR
A1  - Fedchenko, Olena
A1  - Song, Young-Joon
A1  - Tkač, Olena
A1  - Lytvynenko, Yaryna
A1  - Chernov, Sergii
A1  - Gloskovskii, Andrei
A1  - Schlueter, Christoph
A1  - Peters, Marius
A1  - Kliemt, Kristin
A1  - Krellner, Cornelius
A1  - Valentí, Roser
A1  - Schönhense, Gerd
A1  - Elmers, Hans-Joachim
T1  - Valence-transition-induced changes of the electronic structure in EuPd2Si2
T2  - arXiv
N2  - We present results of hard X-ray angle-resolved photoemission spectroscopy and photoemission diffraction measurements performed on high-quality single crystals of the valence transition compound EuPd2Si2 for temperatures 25~K ≤ T ≤ 300~K. At low temperatures we observe a Eu 4f valence v=2.5, % occupation number n=6.5, which decreases to v=2.1 for temperatures above the valence transition around TV≈160~K. The experimental valence numbers resulting from an evaluation of the Eu(III)/Eu(II) 3d core levels, are used for calculating band structures using density functional theory. The valence transition significantly changes the band structure as determined by angle-resolved photoemission spectroscopy. In particular, the Eu 5d valence bands are shifted to lower binding energies with increasing Eu 4f occupancy. To a lesser extent, bands derived from the Si 3p and Pd 4d orbitals are also affected. This observation suggests a partial charge transfer between Eu and Pd/Si sites. Comparison with {\it ab-initio} theory shows a good agreement with experiment, in particular concerning the unequal band shift with increasing Eu 4f occupancy.
Y1  - 2023
UR  - http://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/82438
UR  - https://nbn-resolving.org/urn:nbn:de:hebis:30:3-824386
UR  - https://arxiv.org/abs/2310.06421v1
IS  - 2310.06421 Version 1
PB  - arXiv
ER  -