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Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor
(2020)
Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper, we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode, we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves, excited at 2 THz, are overdamped, and their decay time lies in the range of 25-70 fs. Despite this short decay time, the decay length is rather long, i.e., 0.3-0.5 μm, because of the rather large propagation speed of the plasma waves, which is found to lie in the range of 3.5-7 × 106 m/s, in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1/4 power law.
We investigated the excitation of surface plasmon polaritons on gold films with the metallized probe tip of a scattering-type scanning near-field optical microscope (s-SNOM). The emission of the polaritons from the tip, illuminated by near-infrared laser radiation, was found to be anisotropic and not circularly symmetric as expected on the basis of literature data. We furthermore identified an additional excitation channel via light that was reflected off the tip and excited the plasmon polaritons at the edge of the metal film. Our results, while obtained for a non-rotationally-symmetric type of probe tip and thus specific for this situation, indicate that when an s-SNOM is employed for the investigation of plasmonic structures, the unintentional excitation of surface waves and anisotropic surface wave propagation must be considered in order to correctly interpret the signatures of plasmon polariton generation and propagation.
Surface plasmon polaritons on (silver) nanowires are promising components for future photonic technologies. Here, we study near-field patterns on silver nanowires with a scattering-type scanning near-field optical microscope that enables the direct mapping of surface waves. We analyze the spatial pattern of the plasmon signatures for different excitation geometries and polarization and observe a plasmon wave pattern that is canted relative to the nanowire axis, which we show is due to a superposition of two different plasmon modes, as supported by electromagnetic simulations including the influence of the substrate. These findings yield new insights into the excitation and propagation of plasmon polaritons for applications in nanoplasmonic devices.
Launching and manipulation of polaritons in van der Waals materials offers novel opportunities for field-enhanced molecular spectroscopy and photodetection, among other applications. Particularly, the highly confined hyperbolic phonon polaritons (HPhPs) in h-BN slabs attract growing interest for their capability of guiding light at the nanoscale. An efficient coupling between free space photons and HPhPs is, however, hampered by their large momentum mismatch. Here, we show —by far-field infrared spectroscopy, infrared nanoimaging and numerical simulations— that resonant metallic antennas can efficiently launch HPhPs in thin h-BN slabs. Despite the strong hybridization of HPhPs in the h-BN slab and Fabry-Pérot plasmonic resonances in the metal antenna, the efficiency of launching propagating HPhPs in h-BN by resonant antennas exceeds significantly that of the non-resonant ones. Our results provide fundamental insights into the launching of HPhPs in thin polar slabs by resonant plasmonic antennas, which will be crucial for phonon-polariton based nanophotonic devices.
Classical light microscopy is one of the main tools for science to study small things. Microscopes and their technology and optics have been developed and improved over centuries, however their resolution is ultimately restricted physically by the diffraction of light based on its wave nature described by Maxwell’s equations. Hence, the nanoworld – often characterized by sub-100-nm structural sizes – is not accessible with classical far-field optics (apart from special x-ray laser concepts) since its lateral resolution scales with the wavelength.
It was not until the 20th century that various technologies emerged to circumvent the diffraction limit, including so-called near-field microscopy. Although conceptually based on Maxwell’s long known equations, it took a long time for the scientific community to recognize its powerful opportunities and the first embodiments of near-field microscopes were developed. One representative of them is the scattering-type Scanning Near-field Optical Microscope (s-SNOM). It is a Scanning Probe Microscope (SPM) that enables imaging and spectroscopy at visible light frequencies down to even radio waves with a sub-100-nm resolution regardless of the wavelength used. This work also reflects this wide spectral range as it contains applications from near-infrared light down to deep THz/GHz radiation.
This thesis is subdivided into two parts. First, new experimental capabilities for the s-SNOM are demonstrated and evaluated in a more technical manner. Second, among other things, these capabilities are used to study various transport phenomena in solids, as already indicated in the title.
On the technical side, preliminary studies on the suitability of the qPlus sensor – a novel scanning probe technology – for near-field microscopy are presented.
The scanning head incorporating the qPlus sensor–named TRIBUS – is originally intended and built for ultra-high vacuum, low temperature, and high resolution applications. These are desirable environments and properties for sensitive nearfield measurements as well. However, since its design was not planned for near-field measurements, several special technical and optical aspects have to be taken into account, among others the scanning tip design and a spring suspended measurement head.
In addition, in this thesis field-effect transistors are used as THz detectors in an s-SNOM for the first time. Although THz s-SNOM is already an emerging technology, it still suffers from the requirements of sophisticated and specialized infrastructure on both the detector and laser side. Field-effect transistors offer an alternative that is flexible, cost-efficient, room-temperature operating, and easy to handle. Here, their suitability for s-SNOM measurements, which in general require very sensitive and fast detectors, is evaluated.
In the scientific part of this thesis, electromagnetic surface waves on silver nanowires and the conductivity/charge carrier density in silicon are investigated. Both are completely different concepts of transport phenomena, but this already shows the general versatility of the s-SNOM as it can enter both fields. Silver nanowires are analysed by means of near-infrared radiation. Their plasmonic behaviour in this spectral region is studied complementing other simulations and studies in literature performed on them using for example far-field optics.
Furthermore, the surface wave imaging ability of the s-SNOM in the near-infrared regime is thoroughly investigated in this thesis. Mapping surface waves in the mid-infrared regime is widespread in the community, however for much smaller wavelengths there are several important aspects to be considered additionally, such as the smaller focal spot size.
After that, doped and photo-excited silicon substrates are investigated. As the characteristic frequencies of charge carriers in semiconductors – described by the plasma frequency and the Drude model – are within the THz range, the THz s-SNOM is very well suited to probe their behaviour and to reveal contrasts, which has already been shown qualitatively by numerous literature reports. Here, the photo-excitation enables to set and tune the charge carrier density continuously.
Furthermore, the analysis of all silicon samples focuses on a quantitative extraction of the charge carrier densities and doping levels ...