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The plasma membrane (PM) is composed of a complex lipid mixture that forms heterogeneous membrane environments. Yet, how small-scale lipid organization controls physiological events at the PM remains largely unknown. Here, we show that ORP-related Osh lipid exchange proteins are critical for the synthesis of phosphatidylinositol (4,5)-bisphosphate [PI(4,5)P2], a key regulator of dynamic events at the PM. In real-time assays, we find that unsaturated phosphatidylserine (PS) and sterols, both Osh protein ligands, synergistically stimulate phosphatidylinositol 4-phosphate 5-kinase (PIP5K) activity. Biophysical FRET analyses suggest an unconventional co-distribution of unsaturated PS and phosphatidylinositol 4-phosphate (PI4P) species in sterol-containing membrane bilayers. Moreover, using in vivo imaging approaches and molecular dynamics simulations, we show that Osh protein-mediated unsaturated PI4P and PS membrane lipid organization is sensed by the PIP5K specificity loop. Thus, ORP family members create a nanoscale membrane lipid environment that drives PIP5K activity and PI(4,5)P2 synthesis that ultimately controls global PM organization and dynamics.
Oscillations play a critical role in cognitive phenomena and have been observed in many brain regions. Experimental evidence indicates that classes of neurons exhibit properties that could promote oscillations, such as subthreshold resonance and electrical gap junctions. Typically, these two properties are studied separately but it is not clear which is the dominant determinant of global network rhythms. Our aim is to provide an analytical understanding of how these two effects destabilize the fluctuation-driven state, in which neurons fire irregularly, and lead to an emergence of global synchronous oscillations. Here we show how the oscillation frequency is shaped by single neuron resonance, electrical and chemical synapses.The presence of both gap junctions and subthreshold resonance are necessary for the emergence of oscillations. Our results are in agreement with several experimental observations such as network responses to oscillatory inputs and offer a much-needed conceptual link connecting a collection of disparate effects observed in networks.
Orts- und zeitaufgelöste Elektronendichte eines gepulsten induktiv gekoppelten Entladungsplasmas
(2009)
In der vorliegenden Bachelorarbeit wurde ein Modell für die räumlich und zeitlich aufgelöste Elektronendichteverteilung in einem gepulsten induktiv gekoppelten Plasma erstellt. Experimentell war es, bedingt durch den gepulsten Betrieb und die Wahl der Diagnostikmethode im Experiment „Prometheus“, nur möglich über die Zeit und den Ort gemittelte Elektronendichten zu messen.
Um nun den räumlichen Verlauf der Elektronendichte zu bestimmen, wurde die räumliche Elektronendichteverteilung durch eine ambipolare homogene Diffusion beschrieben. Die daraus resultierende Differentialgleichung wurde mithilfe von sphärischen Koordinaten unter Annahme von Azimutal- und Polarwinkelsymmetrie gelöst.
Der zeitliche Elektronendichteverlauf wurde durch die, für diesen Elektronendichtebereich gültige, Proportionalität zwischen elektrischer Leistung im Plasma und Elektronendichte berechnet. Die elektrische Leistung und deren zeitlicher Verlauf im Plasma ließ sich über ein Photodiodensignal im experimentellen Aufbau ermitteln.
Das so ermittelte Modell wurde auf die gemessenen integrierten Elektronendichten des Experiments „Prometheus“ angewendet. Durch das Modell ließ sich eine Aussage über die tatsächliche maximale Elektronendichte innerhalb des Entladungspulses treffen.
Durch Messen der vollständigen Impulsvektoren beider Coulomb-explodierender, einfachgeladener Fragmente eines doppelionisierten, diatomaren, homonuklearen Moleküls (H2, N2, O2) können verschiedene Ionisationsprozesse identifiziert werden. Bei der sogenannten COLd Target Recoil Ion Momentum Spectroskopy (COLTRIMS) wird ein überschall Gasjet mit ultrakurzen, hochintensiven Laserpulsen penetriert. Aus den gemessenen Fragmentimpulsen kann die freigesetzte kinetische Energie, sowie die ursprüngliche Lage der Molekülachse im Laborsystem berechnet werden, woraus winkelabhängige Explosionswahrscheinlichkeiten abgeleitet werden können, die unter bestimmten Bedingungen die orbitale Symmetrie der Moleküle wiederspiegeln. Unter Benutzung verschiedener Pulslängen des Lasers (35 fs und 8 fs) und Variation der Polarisation (linear, zirkular) koennen Ionisationsmechanismen wie rescattering oder sequentielle Ionisation identifiziert werden.
This work deals with the use of dielectrics with high permeability, so-called high-k dielectrics in organic thin-film field-effect transistors (FETs). The central part was the preparation of the high-k dielectric and its implementation in transistors, in which organic semiconductors were used as active layer. A field-effect transistor can be used to measure the charge carrier mobility. Employing high-k dielectrics the carrier concentration in the active layer can be greatly increased. In this way, high charge carrier concentrations in organic layers can be achieved without chemical doping. As high-k dielectric strontium titanate (STO) was selected. It is also available as a niobium-doped and therefore conducting substrate material. Thus, one has an ideal substrate for the growth of the dielectric layer in conjunction with a substrate which acts as gate electrode. As the organic semiconductor the small molecules pentacene and copper phthalocyanine (CuPc) were sublimated, as electrical contacts gold was used. As a key part of this work an ultra high vacuum chamber system was constructed for in situ preparation of field effect transistors. For the deposition of the organic thin films a molecular beam deposition chamber was built, including a manipulator and effusion cells as evaporation sources. For the preparation of the dielectric a sputtering chamber was set-up. Another chamber was used in conjunction with an effusion cell for the deposition of the gold contacts. For the structured deposition of the different layers in the devices a shadow mask system was implemented. Movable masks could be positioned by means of a wobble stick onto the sample carriers. The system thus allowed for the use of masks in all chambers. The different thin films required in the transistor structure were first individually prepared and characterized. For the characterization primarily X-ray diffraction and optical microscopy were used. The growth of pentacene was analyzed on aplha-AlO substrates. With X-ray diffraction the (00l) reflections of the thin film phase were observed. In growth studies of CuPc aplha-AlO and STO substrates were used. With X-ray diffraction the aplha-phase was detected. With increasing substrate temperature an increase in crystallinity, but also an increase in surface roughness was observed. The sputtering of STO as a high-k dielectric was studied and optimized. Simultaneously, a high deposition rate, a smooth film surface and good crystallinity of the layer were required. As the most important parameters the substrate temperature, pressure and sputtering power were identified. Argon and oxygen were employed as sputtering gases, as substrate MgO was used. The films showed in comparison to crystalline STO a distortion to larger lattice constants. The degree of distortion decreased with increasing chamber pressure, on the other hand, deposition rate decreased with increasing chamber pressure as well. By combining the individual deposition processes FETs in bottom-gate geometry were prepared. The first step was always sputtering of the STO dielectric on niobium-doped STO substrates. Subsequently, the electrodes and the organic layer were deposited. For comparison transistors on silicon substrates with silicon dioxide (SiO2) as the dielectric were prepared. To study the transistor properties a measurement setup was build. A dielectric constant of about 190 for the STO in the transistors was achieved. The transistors with CuPc as active layer showed p-type conduction behavior. The transistors with STO as dielectric had a much stronger response than those with SiO2. They reached mobilities of 2E-4 cm2/Vs at very low applied voltages of 3V. It could thus be demonstrated that STO is suitable as a dielectric for organic FETs, and that through the use of high-k dielectrics high charge carrier densities can be achieved.
In this work the preparation of organic donor-acceptor thin films was studied. A chamber for organic molecular beam deposition was designed and integrated into an existing deposition system for metallic thin films. Furthermore, the deposition system was extended by a load-lock with integrated bake-out function, a chamber for the deposition of metallic contacts via stencil mask technique and a sputtering chamber. For the sublimation of the organic compounds several effusion cells were designed. The evaporation characteristic and the temperature profile within the cells was studied. Additionally, a simulation program was developed, which calculates the evaporation characteristics of different cell types. The following processes were integrated: evaporation of particles, migration on the cell walls and collisions in the gas phase. It is also possible to consider a temperature gradient within the cell. All processes can be studied separately and their relative strength can be varied. To verify the simulation results several evaporation experiments with different cell types were employed. The thickness profile of the prepared thin films was measured position-dependently. The results are in good agreement with the simulation. Furthermore, the simulation program was extended to the field of electron beam induced deposition (EBID). The second part of this work deals with the preparation and characterization of organic thin films. The focus hereby lies on the charge transfer salt (BEDT-TTF)(TCNQ), which has three known structure variants. Thin films were prepared by different methods of co-evaporation and were studied with optical microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy (EDX).The formation of the monoclinic phase of (BEDT-TTF)(TCNQ) could be shown. As a last part tunnel structures were prepared as first thin film devices and measured in a He4 cryostat.
Aufgrund der §§ 20, 44 Abs. 1 Nr. 1 des Hessischen Hochschulgesetzes in der Fassung vom 14. Dezember 2009, zuletzt geändert durch Gesetz vom 27. Mai 2013, hat der Fachbereichsrat des Fachbereichs Physik der Johann Wolfgang Goethe-Universität Frankfurt am Main am 20. Mai 2020 die folgende Ordnung für den Masterstudiengang Physik beschlossen. Diese Ordnung hat das Präsidium der Johann Wolfgang Goethe-Universität gemäß § 37 Abs. 5 Hessisches Hochschulgesetz am 30. Juni 2020 genehmigt. Sie wird hiermit bekannt gemacht.