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This work gives a detailed introduction into a fully new experimental method to investigate the quantum crystal behavior of solid Helium-4. It has been found that a fascinating new effect occurs in the expansion of solid Helium-4 into a vacuum through pinhole orifices with diameters between 1 and 5 µm. It is observed that the beam flux intensity shows a periodic behavior for source conditions corresponding to the solid phase of Helium-4. The period is in the range of seconds up to minutes. It shows a strong dependence on temperature and source pressure. The oscillating part of the beam flux intensity amounts several percent of the total flux. This new phenomenon has been studied for temperatures between 2.1 K and 1.3 K and pressures up to 30 bar above the melting pressure. The beam flux intensity has been recorded by the vacuum pressure in a pitot vacuum chamber. The jet velocity in the range of 200 m/sec indicates that surprisingly the beam is a liquid jet, whereas the conditions in the source correspond to the solid state. In this work mainly the behavior of the flux modulation has been studied as a function of pressure and temperature and the influence of the isotope Helium-3. Furthermore geometrical aspects such as the influence of the nozzle diameter d0 have been investigated. In order to explain this novel phenomenon a kinetic model based on the injection of excess vacancies into the solid is proposed. According to this model the vacancies are generated at a solid/liquid interface. Forced by drift and diffusion they accumulate at some distance from the orifice, leading to the collapse of the solid. With the subsequent re-injection of vacancies the effect repeats and turns out to be periodical. The reproducibility of the time dependent beam flux intensity is demonstrated for a wide range of temperatures and pressures and gives direct access to values such as the temperature and pressure dependence of the vacancy diffusion coefficient Dv in the range of 10 high -5 cm high 2/sec, the recombination time of vacancies with interstitials T r near 1-20 sec and the vacancy activation energy f near 20 K. The good agreement with former experimental results by Zuev et al. [131] confirms the applicability of the theoretical model. As a result from the kinetic model the vacancy concentration is increased above the equilibrium vacancy concentration, caused by the injection of excess vacancies. Therefore, the most important discovery is the possibility of generating a non-equilibrium quantum solid. The investigation of this non-equilibrium solid leads to the discovery of a fluid-like regime in the solid phase of Helium-4 at temperatures below T = 1.58 K. The result gives a strong indication for the supersolid state, especially because the fluid-like behavior of the solid can be eliminated with smallest concentrations of Helium-3.
A new technique for precision ion implantation has been developed. A scanning probe has been equipped with a small aperture and incorporated into an ion beamline, so that ions can be implanted through the aperture into a sample. By using a scanning probe the target can be imaged in a non-destructive way prior to implantation and the probe together with the aperture can be placed at the desired location with nanometer precision. In this work first results of a scanning probe integrated into an ion beamline are presented. A placement resolution of about 120 nm is reported. The final placement accuracy is determined by the size of the aperture hole and by the straggle of the implanted ion inside the target material. The limits of this technology are expected to be set by the latter, which is of the order of 10 nm for low energy ions. This research has been carried out in the context of a larger program concerned with the development of quantum computer test structures. For that the placement accuracy needs to be increased and a detector for single ion detection has to be integrated into the setup. Both issues are discussed in this thesis. To achieve single ion detection highly charged ions are used for the implantation, as in addition to their kinetic energy they also deposit their potential energy in the target material, therefore making detection easier. A special ion source for producing these highly charged ions was used and their creation and interactions with solids of are discussed in detail.