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Terahertz (THz) physics are an emerging field of research dealing with electromagnetic radiation in the far-infrared to microwave region. The development of innovative technologies for the generation and detection of THz radiation has only in the recent past led to a tremendous rise of both fundamental research as well as investigation of possible fields of application for THz radiation. The most prominent reason has long been the scarce accessibility of the THz region of the electromagnetic spectrum - commonly loosely located between 0.1 and 30 THz - to broad research, and it was mostly limited to astronomy and high energy physics facilities. Over the recent years, numerous novel concepts on both the source and detector side have been proposed and successfully implemented to overcome this so-called THz gap. New technology has become available and paved the way for wide-spread experimental laboratory work and accompanying theoretical investigations. First application studies have emerged and in some cases even commercial development of the field of THz physics is on the rise. Despite these enormous progresses, a continuing demand for more efficient THz detectors still impels current technological research. Relatively low source powers are often a major limiting factor and the request for new detection concepts, their understanding and implementation, as well as the optimization on a device basis has been and still remains in place. One of these concepts is the use of field-effect transistors (FETs) high above their conventional cut-off frequencies as electronic THz detectors. The concept has been proposed in a number of theoretical publications by M. Dyakonov and M. Shur in the early 1990's, who pioneered to show that under certain boundary conditions, non-linear collective excitations of the charge carrier system of a two-dimensional electron gas (2DEG) by incident THz radiation can exhibit rectifying behaviour - a detection principle, which has become known as plasma wave or plasmonic mixing. Up until this day, the concept has been successfully implemented in many device realizations - most advanced in established silicon CMOS technology - and stands on the edge of becoming commercially available on a large scale. The main direction of the work presented in this thesis was the modeling and experimental characterization of antenna-coupled FETs for THz detection - termed TeraFETs in this and the author's previous works - which have been implemented in different material systems. The materials presented in this thesis are AlGaN/GaN HEMTs and graphene FETs. In a number of scientific collaborations, TeraFETs were designed based on a hydrodynamic transport model, fabricated in the respective materials, and characterized mainly in the lower THz frequency region from 0.2 to 1.2 THz. The theoretical description of the plasma wave mixing mechanism in TeraFETs, as initiated by Dyakonov and Shur, was based on a fluid-dynamic transport model for charge carriers in the transistor channel. The THz radiation induces propagating charge density oscillations (plasma waves) in the 2DEG, which via non-linear self-mixing cause rectification of the incident THz signals. Over the course of this work, it became evident in the on-going detector characterization experiments that this original theoretical model of the detection process widely applied in the respective literature does not suffice to describe some of the experimental findings in TeraFET detection signals. Thorough measurements showed signal contributions, which are identified in this work to be of thermoelectric origin arising from an inherent asymmetric local heating of charge carriers in the devices. Depending on the material, these contributions constituted a mere side effect to plasmonic detection (AlGaN/GaN) or even reached a comparable magnitude (graphene FETs). To include these effects in the detector model, the original reduced fluid-dynamic description was extended to a hydrodynamic transport model. The model yields at the current stage a reasonable qualitative agreement to the measured THz detection signals. This thesis presents the formulation of a hydrodynamic charge carrier transport model and its specific implementation in a circuit simulation tool. A second modeling aspect is that the transport equations cover only the intrinsic plasmonic detection process in the active gated part of the TeraFET's transistor channel. In order to model and simulate the behavior of real devices, extrinsic detector parts such as ungated channel regions, parasitic resistances and capacitances, integrated antenna impedance, and others must be considered. The implemented detector model allows to simulate THz detection in real devices with the above influences included. Besides presentation of the detector model, experimental THz characterization of the fabricated TeraFETs is presented in this work. Careful device design yielded record detection performance for detectors in both investigated materials. The respective results are shown and the experimental observations of the thermoelectric effect in TeraFETs are compared to modeling results. It is the goal of this work to provide a framework for further theoretical and experimental studies of the plasmonic and thermoelectric effect in TeraFETs, which could eventually lead to a new type of THz detectors particularly exploiting the thermoelectric effect to enhance the sensitivity of today's plasmonic TeraFETs.