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The various OPE mixtures were also tested on sSOI material which consists of a thin strained silicon layer on top of an insulator like silicon dioxide. The OPE A, B and F are able to reveal threading dislocations (TD) in the strained silicon film (chapter 5.11). The TD densities determined for the OPE A correspond very well with those obtained with the Secco diluted reference. The tested OPE mixtures are not able to delineate other crystal defects like stacking faults, pile ups or twins, which also appear in the strained silicon. Some Organic Peracid Etches were also tested on wafers with an epitaxial silicon layer and on silicon substrates. Epitaxially produced silicon layers are nearly defect-free. Etching times were chosen such that only a part of the epitaxial layer was removed. Nevertheless, after very long etching times (> 16 h) isolated pits were found, with defect densities ranging from 104/cm3 to 106/cm3 depending on the etching solution used. No etch pits were found in the remaining epitaxial layer when OPE F was used. Longer etching times appear to favour the formation of artefects. These artefacts could be caused by the formation of gas bubbles, particles or micro scratches at the crystal surface. The OPE C and D are able to reveal vacancy agglomerates (D-defects) in silicon substrates (see under 5.5, 5.6 and 5.11in chapter 5). Due to their low removal rates and the long etching times which favour the formation of artifacts, these solutions are less suited to the delineation of defects in silicon substrates. In the second part of this study the different etch formulations have been compared with each other in respect of their physical properties like removal rates, activation energies, standard potentials and selectivities (chapter 6). The selectivity was determined at etch pits caused by dislocations. The depth of the etch pits, determined by atomic force microscopy (AFM), should be dependent on the selectivity of the corresponding etching solution used. The higher the selectivity of the solution the deeper the etch pit should be. It was assumed that a low removal rate and a high activation energy for the etching process should correspond to a high selectivity. However, the experimental results have shown that it is not possible to predict the selectivity of an etching solution from experimental parameters like removal rate or activation energy. One must bear in mind that selectivity was only determined on one particular type of crystal defect, namely on dislocations. Values for selectivity in the etching solutions can differ for other defect types. Besides the etching solutions used in this study differ considerably from each other in respect of their chemical and physical roperties. They can be divided into three completely different etching systems. The original Secco solution and the diluted variations thereof are hydrofluoric acid-dichromate mixtures with the Cr6+ species as the oxidizing agent. The Jeita and MEMC solutions contain nitric acid, hydrofluoric acid and, as diluents, acetic acid and water. Here the oxidizing agents are various N(III) species which are formed autocatalytically during the etching process. The concentration of acetic acid also plays an important role as it lowers the degree of dissociation of HF and of HNO3. This has an influence on the pH and the standard potential of the etching solution. The Organic Peracid Etches are mixtures of hydrogen peroxide and a short-chain alkanoic acid like acetic acid. Such systems are strictly speaking not aqueous solutions, the reactive species is the peracid formed.Within each system, however, a certain relationship is perceived between the selectivity of the etching solution on the one hand, and the and the activation energy or the removal rate on the other. The decreased activation energy for the etching process of silicon at a dislocation can be calculated from experimental data by using the Arrhenius equation (chapter 6.3). It was found that the strain inside the crystal lattice caused by a dislocation loop leads to an increase of the potential energy of ~ 5 % and, hence, a decrease of the activation energy of ~ 5 % and an increase in the removal rate of ~ 100 %.