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This thesis is concerned with systematic investigations of electronic noise in novel condensed matter systems. Although fluctuations are frequently considered a nuisance, that is, a disturbance limiting the accuracy of scientific measurements, in many cases they can reveal fundamental information about the inherent system dynamics. During the past decades, the study of electronic fluctuations has evolved into an indispensable tool in condensed matter physics.
The focus of the present work lies both in a further development of the fluctuation spectroscopy technique and in the study of materials of current interest. In particular, a comprehensive study of the charge carrier dynamics in the archetypal diluted magnetic semiconductors (Ga,Mn)As and (Ga,Mn)P was performed. In spite of extensive research work carried out during the last years, there still exists no theoretical consensus on the precise mechanism of ferromagnetic order and the electronic structure in these materials. Moreover, disorder and correlation effects complicate the understanding of these compounds.
Fluctuation spectroscopy experiments presented in this work provide strong evidence that a percolation transition is observed in samples with localized charge carriers, since the normalized resistance noise magnitude displays a significant enhancement around the Curie temperature. In addition, this quantity exhibits a power law scaling behavior as a function of the resistance, which is in good agreement with theoretical models of percolating systems.
By contrast, it was found that the resistance noise in metallic samples is mainly dominated by the physics of defects such as manganese interstitials and arsenic antisites. Furthermore, first noise studies were carried out on hafnia- and yttria-based resistive random access memories. In these memristor devices, the rupture and re-formation of oxygen deficient conducting filaments caused by the electric field and Joule heating driven motion of mobile anions lead to an unusual resistance switching behavior. For the first time, comparative noise measurements on oxygen deficient and stoichiometric hafnium oxide devices, as well as on novel yttrium oxide based devices were performed in this work. Finally, new strategies for noise measurements of highly insulating and extremely low-resistive samples were developed and realized. In detail, an experimental setup for the measurements of dielectric polarization fluctuations in insulating systems was designed and successfully tested. Here, the polarization noise of a sample is measured as current or voltage fluctuations produced within a capacitance cell. The study of dielectric polarization noise allows for conclusions to be drawn regarding equilibrium structural dynamics in insulators such as relaxor ferroelectrics. On the other hand, as successfully demonstrated for a heavy-fermion compound, focused ion beam etching enables to introduce a meander-shaped geometry in single crystal platelets, in order to strongly enhance the sample resistance and thus make resistance noise measurements possible. First results indicate a connection of the noise properties with the Kondo effect in the investigated material.
Die Arbeit beschäftigt sich mit der Herstellung sowie der strukturellen und magnetischen Charakterisierung von zwei Materialklassen von kupferbasierten zweidimensionalen Quanten-Spin-Systemen: Quadratische Gitter von Dimeren sowie geometrisch frustrierte Kagomé Gitter. In beiden Systemen werden Substitutionen vorgestellt die zu verbesserten Eigenschaften führen.
This work ties in with the investigation of the intermediate valent states and valence fluctuations in certain europium based intermetallic systems. Valence fluctuations are a property of the electronic system of a compound that is possibly accompanied by structural effects, which, in some cases, are quite noticable. By assuming how the changes in the electronic system and in the crystal lattice are connected, valence _uctuations of europium are believed to be a possible probe for the theory of quantum critical elasticity, which is investigated on by the SFB TRR 288 (Frankfurt, Mainz, Karlsruhe, Bochum, Dresden).
Here, the proceedings in growing single crystals of di_erent compounds related to this _eld of research are reported. This includes the ThCr2Si2 (122) type compounds EuPd2Si2 as well as the doping series EuPd2(Si1-xGex)2, the Europium based ternary Phosphides EuFe2P2, EuCo2P2, EuNi2P2 and EuRu2P2, and attempts to grow compounds of a derived 1144 structure by ordered substitution of half the Europium, EuKRu4P4.
The largest part of this work focusses on the EuPd2Si2 system, which exhibits intermediate valent europium and a temperature dependent transition between two di_erent intermediate valent states of europium. Crystals of this system were grown using the Czochralski method with a levitating melt and an europium excess flux after a two step prereaction process. Also, explorations of a PdSi-rich flux and external flux methods are reported. Ten Czochralski grown experiments, in six generations iteratevely seeded by the previous generation, were prepared.
Thermodynamical and structural analyses of the crystals located the transition between the di_erent intermediate valent states of europium between 140K and 165 K, transitioning from a high temperature Eu2.3+ state to a low temperature Eu2.7+ state, and classified it as a second order transition. To this transition a lattice anomaly of the a-parameter collapsing about 2% is connected, while the c-parameter remains largely unaffected. Large differences between individual samples can be explained by combining thermodynamical and structural analyses with compositional analysis, revealing the valence transition temperature as strongly dependent on the sample composition and Pd-Si site interchanges.
Searching to change the character of the valence transition to first order, silicon was substituted by germanium to introduce negative pressure. Germanium substituted samples of EuPd2(Si1-xGex)2 were grown using the Czochralski method with the optimized parameters from the growth experiments for the undoped compound. Samples were prepared with a nominal substitution of x = 0.05, x = 0.10, x = 0.15, x = 0.20 (twice) and x = 0.30. For the EuPd2(Si1-xGex)2 system, a phase diagram for the europium valence states is derived from chemical and thermodynamical characterizations.
n ternary europium phosphides EuT2P2, the position of the compounds in the generalized phase diagram and the question of long range magnetic order or valence transition appear connected to an isostructural transition of the tetragonal crystal structure, drastically decreasing the length of the c-parameter while establishing covalent bonds between phosphorus atoms of different interlayers of the structure, the so called ‚collapse‘. While EuFe2P2, EuT2P2 and EuCo2P2 display both long range magnetic order and a non-collapsed crystal structure, EuNi2P2 shows both a valence transition between two intermediate valent states at a characteristic temperature of 36K - accompanied by a small lattice anomaly of the a-parameter shrinking about 0.2% - and a collapsed crystal structure. Samples of EuFe2P2, EuCo2P2 and EuNi2P2 were grown in tin flux and using solid-solid sintering approaches.
Single crystals of EuFe2P2, EuCo2P2 and EuRu2P2 were investigated at ESRF in Grenoble with single crystal X-ray di_ractometry on a pressure range up to 15GPa and at temperatures down to 15K to investigate the nature of the structural transitions in the compounds. While in EuCo2P2 the structural transition occurs as a transition of first order at all temperatures (e.g. at 2GPa for 15 K), in EuFe2P2 and EuRu2P2 the structural collapse evolves over a broad pressure range up to 8GPa and as a transition of second order troughout the temperature ranges, albeit seeming to sharpen at lower temperatures. From the crystallographic data, elastic constants of the compounds could be derived, revealing EuFe2P2 and EuRu2P2 as unexpectedly elastic materials.
In order to probe the structural collapse at more accessible pressures, crystals with a sturcture derived from the 122 structure, but with ordered 50% substitution of europium and hence altering the symmetry from I4/mmm to P4/mmm in a 1144 structure, were exploratively pursued. Different experiments to obtain EuAT4P4 (with A = K, Rb, Cs and T = Fe, Ru) from binary or ternary prereactants or directly from the elements remained largely unsuccessful.
Crystal growth and characterization of cerium- and ytterbium-based quantum critical materials
(2018)
In der Festkörperphysik werden heutzutage Themen wie Supraleitung, Magnetismus und Quantenkritikalität sowohl von experimenteller als auch von theoretischer Seite stark untersucht. Quantenkritikalität und Quantenphasenübergänge können in Systemen erforscht werden, für welche ein Kontroll Parameter existiert, durch den z.B. eine magnetische Ordnung soweit unterdrückt wird, bis der Phasenübergang bei Null Kelvin, bei einem quantenkritischen Punkt (QCP), stattfindet. Vorzugsweise wird quantenkritisches Verhalten an Einkristallen untersucht, da diese in sehr reiner Qualität gezüchtet werden können und da deren gemessenen physikalischen Eigenschaften ausschließlich intrinsisch sind und nicht durch Verunreinigungseffekte überlagert werden. Der Schwerpunkt dieser Arbeit lag auf der Züchtung von Einkristallen und der Charakterisierung von Materialien, die quantenkritische Phänomene aufweisen. Als Ausgangsstoffe dienten dabei Elemente höchstmöglicher Reinheit. Es wurden die Serie YbNi4(P1-xAsx)2 mit einem ferromagnetischen QCP bei x=0,1, die Verbindung YbRh2Si2 mit einem feldinduzierten QCP bei Bcrit = 60mT und die Serie Ce(Ru1-xFex)PO mit einem QCP bei x = 0,86 untersucht. Für alle Verbindungen wurde das Züchtungsverfahren entwickelt, dann wurden Einkristalle gezüchtet und charakterisiert. Die Züchtung wurde zum einen mittels der Bridgman-Methode, zum anderen mit der Czochralski Methode durchgeführt. Neben struktureller und chemischer Charakterisierung der Einkristalle mittels Röntgen-Pulverdiffraktometrie, Laue-Methode und Energie-dispersiver Röntgen-Spektroskopie, wurden auch deren spezifische Wärme, elektrischer Widerstand und Magnetisierung im Temperaturbereich 1,8 – 300 K untersucht. Im weiteren Verlauf wurden die Kristalle in verschiedenen Kooperationen untersucht und bis in den Tieftemperatur- Bereich (20 mK), bei YbRh2Si2 bis in den Submillikelvin-Bereich, charakterisiert. Ausserdem wurden im Rahmen dieser Dissertation Einkristalle weiterer antiferromagnetischer Verbindungen SmRh2Si2, GdRh2Si2, GdIr2Si2, HoRh2Si2 und HoIr2Si2 gezüchtet. Bei diesen Verbindungen stand die Untersuchung elektronischer Oberflächenzustände mittels winkelaufgelöster Photoemissionsspektroskopie im Vordergrund.