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Tetra-auricupride, ideally AuCu, represents the only species showing the coexistence of Au with an elevated level of Pt, as in the case of a detrital grain studied structurally for the first time, from an ophiolite-associated placer at Bolshoy Khailyk, western Sayans, Russia. We infer that tetra-auricupride can incorporate as much as ~30 mol. % of a “PtCu” component, apparently without significant modification of the unit cell. The unit-cell parameters of platiniferous tetra-auricupride are: a 2.790(1) Å, c 3.641(4) Å, with c/a = 1.305, which are close to those reported for ordered AuCu(I) in the system Au–Cu, and close also to the cell parameters of tetraferroplatinum (PtFe), which both appear to crystallize in the same space group, P4/mmm. These intermetallic compounds and natural alloys are thus isostructural. The closeness of their structures presumably allows Pt to replace Au atoms so readily. The high extent of Cu + Au enrichment is considered to be a reflection of geochemical evolution and buildup in levels of the incompatible Cu and Au with subordinate Pt in a remaining volume of melt at low levels of fO2 and fS2 in the system.
Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst
(2012)
In this work the applicability of neopentasilane (Si(SiH3)4) as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.