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Charge transport inside TiO₂ memristors prepared via FEBID

  • We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO2 layer can be deduced.

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Author:Markus Baranowski, Roland Sachser, Bratislav P. MarinkovićORCiD, Stefan Dj. Ivanović, Michael HuthORCiDGND
URN:urn:nbn:de:hebis:30:3-863643
DOI:https://doi.org/10.3390/nano12234145
ISSN:2079-4991
Parent Title (English):Nanomaterials
Publisher:MDPI
Place of publication:Basel
Document Type:Article
Language:English
Date of Publication (online):2022/11/23
Date of first Publication:2022/11/23
Publishing Institution:Universitätsbibliothek Johann Christian Senckenberg
Release Date:2024/08/12
Tag:FEBID; Mott-type variable-range hopping; SEM image; current-voltage (i-v) curves; memristor; resistive switching; temperature dependence measurements; titanium dioxide
Volume:12
Issue:23, art. 4145
Article Number:4145
Page Number:11
First Page:1
Last Page:11
Note:
Funding: Deutscher Akademischer Austauschdienst (DAAD) and the Republic of Serbia ; #451-03-01766/2014-09/12
Note:
Gefördert durch den Open-Access-Publikationsfonds der Goethe-Universität.
Institutes:Physik
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Sammlungen:Universitätspublikationen
Open-Access-Publikationsfonds:Physik
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International