Charge transport inside TiO₂ memristors prepared via FEBID
- We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO2 layer can be deduced.
Author: | Markus Baranowski, Roland Sachser, Bratislav P. MarinkovićORCiD, Stefan Dj. Ivanović, Michael HuthORCiDGND |
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URN: | urn:nbn:de:hebis:30:3-863643 |
DOI: | https://doi.org/10.3390/nano12234145 |
ISSN: | 2079-4991 |
Parent Title (English): | Nanomaterials |
Publisher: | MDPI |
Place of publication: | Basel |
Document Type: | Article |
Language: | English |
Date of Publication (online): | 2022/11/23 |
Date of first Publication: | 2022/11/23 |
Publishing Institution: | Universitätsbibliothek Johann Christian Senckenberg |
Release Date: | 2024/08/12 |
Tag: | FEBID; Mott-type variable-range hopping; SEM image; current-voltage (i-v) curves; memristor; resistive switching; temperature dependence measurements; titanium dioxide |
Volume: | 12 |
Issue: | 23, art. 4145 |
Article Number: | 4145 |
Page Number: | 11 |
First Page: | 1 |
Last Page: | 11 |
Note: | Funding: Deutscher Akademischer Austauschdienst (DAAD) and the Republic of Serbia ; #451-03-01766/2014-09/12 |
Note: | Gefördert durch den Open-Access-Publikationsfonds der Goethe-Universität. |
Institutes: | Physik |
Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Sammlungen: | Universitätspublikationen |
Open-Access-Publikationsfonds: | Physik |
Licence (German): | Creative Commons - CC BY - Namensnennung 4.0 International |